<?xml version="1.0" encoding="UTF-8"?>
<doi_batch version="4.3.0" xmlns="http://www.crossref.org/doi_resources_schema/4.3.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.crossref.org/doi_resources_schema/4.3.0 http://www.crossref.org/schema/deposit/doi_resources4.3.0.xsd">
<head>
<doi_batch_id>c7de655d-b7df-49c5-91e0-f1fa8df1c508</doi_batch_id>
<depositor>
<name>beie</name>
<email_address>director@blueeyesintelligence.org</email_address>
</depositor>
</head>
<body>
<doi_citations>
<doi>10.35940/ijitee.F8718.0410621</doi>
<citation_list><citation key="ref0"><doi>10.1109/JSSC.2010.2053095</doi><unstructured_citation>K. Kang et al., &quot;A 60-GHz OOK receiver with an on-chip antenna in 90nm CMOS,&quot; IEEE J. Solid-State Circuits, vol. 45, no. 9, pp. 1720-1731,Sep. 2010.</unstructured_citation></citation><citation key="ref1"><doi>10.1109/JSSC.2017.2727040</doi><unstructured_citation>Y. Yu, H. Liu, Y. Wu and K. Kang, &quot;A 54.4-90 GHz Low-Noise Amplifier in 65-nm CMOS,&quot; IEEE Journal of Solid-State Circuits, vol. 52, no. 11, pp. 2892-2904, Nov. 2017</unstructured_citation></citation><citation key="ref2"><unstructured_citation>H. Morkner, M. Frank, and D. Millicker, &quot;A high performance 1.5 dB low noise GaAs PHEMT MMIC amplifier for low cost 1.5-8 GHz commercial applications,&quot; in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig. pp.13-16, 1993.</unstructured_citation></citation><citation key="ref3"><doi>10.1109/JSSC.2003.809523</doi><unstructured_citation>C. Y. Cha and S. G. Lee, &quot;A 5.2-GHz LNA in 0.35 μm CMOS utilizing inter-stage series resonance and optimizing the substrate resistance,&quot;IEEE J. of Solid-State Circuits, vol. 38, pp. 669-672, Apr.2003.</unstructured_citation></citation><citation key="ref4"><doi>10.1109/LMWC.2003.819379</doi><unstructured_citation>H. Liao and H. R. Chuang, &quot;A 5.7-GHz 0.18-μm CMOS gain controlled differential LNA with current reuse for WLAN receiver,&quot; IEEE Microw. Wireless Compon. Lett., vol. 13, pp. 526-528, Dec.</unstructured_citation></citation><citation key="ref5"><unstructured_citation>2003.</unstructured_citation></citation><citation key="ref6"><doi>10.1109/RFIC.2007.380958</doi><unstructured_citation>J. S. Walling, S. Shekhar, and D. J. Allstot, &quot;A gm-boosted Current- reuse LNA in 0.18μm CMOS,&quot; in IEEE Radio Freq. Integr. Circuits Symp., pp 613-616, June, 2007.</unstructured_citation></citation><citation key="ref7"><unstructured_citation>J. S. Yao, X. P. Sun, and B. Lin, &quot;1.5-2.7 GHz ultralow noise bypass LNA,&quot; in IEEE MTT-S Int. Microw. Symp. Dig., June, 2014.</unstructured_citation></citation><citation key="ref8"><unstructured_citation>Y. C. Hsu, P. H. Wu, C. C. Chen, J. Y. Li, S. F. Lee, W. J. Ho, and C. K. Lin, &quot;Single-chip RF frontend MMIC using InGaAs E/D pHEMT for 3.5 GHz WiMAX applications,&quot; In European Microwave conference, pp. 1217-1220, Oct. 2007.</unstructured_citation></citation><citation key="ref9"><doi>10.1109/ISICir.2011.6131885</doi><unstructured_citation>Y. Y. Peng, X. Y. Wang, F. Y. Ma, and W. Q. Sui, &quot;A low power S-band receiver using GaAs pHEMT technology,&quot; in IEEE 13th ISIC Symp. Dig., Dec., 2011.</unstructured_citation></citation><citation key="ref10"><doi>10.1109/DDECS.2013.6549827</doi><unstructured_citation>H. L Kao, C. S. Yeh, C. L. Cho, B. W. Wang, P.-C. Lee, B. H. Wei, and H. C. Chiu, &quot;Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology,&quot; in IEEE DDECS Symp. Dig., April, 2013</unstructured_citation></citation></citation_list>
</doi_citations>
</body>
</doi_batch>
