A Multilayer High-Speed Magnetic-Tunnel Junction Magneto-resistive RAM Structure with Read-Disturb-Detection Circuit by Using Nano Electronics Quantum Dot Cellular Method
Rupsa Roy1, Swarup Sarkar2, Sudipta Das3

1Rupsa Roy*, ETCE. Jakir Hossain Institute of Polytechnic, Murshidabad, W.B, India.
3Swarup Sarkar, EC Department, Sikkim Manipal University, Sikkim, India.
3Sudipta Das, Department of ECE, IMPS College of Engineering & Technology, Malda, W.B, India.

Manuscript received on November 15, 2019. | Revised Manuscript received on 20 November, 2019. | Manuscript published on December 10, 2019. | PP: 3370-3376 | Volume-9 Issue-2, December 2019. | Retrieval Number: A5183119119/2019©BEIESP | DOI: 10.35940/ijitee.A5183.129219
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: In this nano technical world the “Complementary MOS technology” can be replaced by using “Quantum Dot Cellular Automata” with reversible logical phenomenon to achieve a fault tolerant, low-cost nano electronics formation by feature size, latency and power consumption minimization. The memory is one of the most interesting part of research in this digital world. This paper represents an optimizing highfrequency (in THz) reversible design of a “Random Access Memory” which is simulated by using nano electronics ‘QCA’ simulator to get a better performance than “Complementary MOS technology” with high frequency (in THz), less occupied area and dissipated power. This paper also shows a highly flexible magnetic quantum cell logic-design and MTJ logical representation which is used for non-volatile MRAM which is widely used in digital electronics world and as a part of aerospace and military device. A reversible nano electronics formation of the control logic to select the word-line and input line of the MRAM also presented here. The reversible-logic can avoid the information-loss in memory device by zero-heating technique. Non-reversible formations dissipate ‘KTln2’ energy per bit which can be ignored in reversible formation. But, read disturb at low write current is a major issue of MTJ MRAM due to the same path of read/write current path. In this paper a three dimension reversible “Read Disturb Detection Circuit” is formed by nano electronics ‘QCA’ technology which bit-wise follows the control logic of read-disturb-detection technique and the same figure also simulated by ‘VHDL’ coding in Xilinx software to prove the advantages of ‘QCA’ technology contrast to Xilinx This paper also focuses on the correspondence between change of temperature and supply power. 
Keywords: Magnetic Tunnel Junction, Quantum cell, Reversible Logic, Read Disturb Detection.
Scope of the Article: Digital System and Logic Design