New Segregation Method of Sic During Carbo-Thermal Silica Reduction
Abderahmane Boucetta

Abderahmane Boucetta, Graduate School of Engineering and School of Engineering, Nagoya University, Nagoya, Japan.
Manuscript received on March 15, 2020. | Revised Manuscript received on March 31, 2020. | Manuscript published on April 10, 2020. | PP: 1657-1660 | Volume-9 Issue-6, April 2020. | Retrieval Number: F4351049620/2020©BEIESP | DOI: 10.35940/ijitee.F4351.049620
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Abstract: The focus on SOG-Si for solar cell production have been increased in the recent years. A low cost Si requires a production with less electric energy used, less impurities and fast process. Reducing C presence in Si ingots generally is necessary. In the present work, we attempted to develop a new method to segregate SiC from the bulk Si by means a new shape of ingots that we designed. We have used a conventional induction furnace for this process. A comparison study between 2 shapes of graphite ingots was performed. We have succeeded in segregation of SiC from Si during the carbo-thermal reduction process of silica. the results revealed that The first ingot contained 34.3% of SiC while the second ingot had 100% of Si from about 13mm distance from the ingot bottom.
Keywords: SOG-Si, Ingots, SiC, Impurities.
Scope of the Article: Probabilistic Models and Method