Model of HfO2/Al2O3 Dielectric AlNInNAlGaNMOS Hemt for Power Application
N. Anbuselvan1, P. Anandan2, A. Manju3

1N.Anbuselvan, Assistant Professor, Department of EEE, Saveetha School of Engineering, Thandalam, Chennai.
2P.Anandan, Professor, Department of ECE, C.Abdul Hakeem College of Engineering and Technology, Melvisharam.
3A.Manju, Professor, Department of EEE, Saveetha School of Engineering, Thandalam, Chennai.

Manuscript received on October 14, 2019. | Revised Manuscript received on 22 October, 2019. | Manuscript published on November 10, 2019. | PP: 3999-4002 | Volume-9 Issue-1, November 2019. | Retrieval Number: A5085119119/2019©BEIESP | DOI: 10.35940/ijitee.A5085.119119
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Abstract: The work involves to devise dielectric HfO2 /Al2O3MOS-HEMT stack to validate for the device structure through the refinement of mesh analysis. The structure of the AlNInNAlGaN HEMT MOS-HEMTs are designed and meshed using the script file in the Sentaurus structure editor. TheAlNInNAlGaN MOS-HEMTs output characteristic are examined for physics of MOS-HEMT in Hydrodynamic model TCAD. The amalgamation formation ofthe Al0.30GaN0.70 barrierinterface with the channelofhigh 2DEG density result in anincreaseddrain current density and high trans conductance. Additional the device performance of DC transfer characteristics, small signal analysis of AlN/InN/AlGaNMOS-HEMT are analyzed and simulated.
Keywords: MOS-HEMT,AlNInNAlGaN, Hydrodynamic model, Al0.30GaN0.70 and2DEG.
Scope of the Article: Application Specific ICs (ASICs)