Influence of Peripheral Effects on the Electro Physical Properties of Schottky Diodes
T. H. Ismayilov1, A. R. Aslanova2
1Prof. T. H. Ismayilov, Department of Physics, Baku State University, Azerbaijan.
2Dr. A. R. Aslanova, Department of Physics, Baku State University, Azerbaijan.
Manuscript received on 10 July 2015 | Revised Manuscript received on 20 July 2015 | Manuscript Published on 30 July 2015 | PP: 1-7 | Volume-5 Issue-2, July 2015 | Retrieval Number: B2132075215/15©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In Cu-nSi Shottky diode (SD) with different diameters additional electric field (AEF) arising due to the limitation of the contact surface with free surfaces of the contacting materials significantly influence on its electrophysical properties. In SD at the active participation of AEF formed a effective potential barrier height. In SD at the active participation of AEF formed a effective potential barrier height. Forward and initial reverse I-V characteristics SD are determined by the current flowing through as periphery of contact surface as its rest surface and is well described by the thermionic emission theory, as in the idealized homogeneous SD. In a forward and primary reverse bias with increasing diameter SD of 6µm to 100 µm effective potential barrier height and the contact resistance increased, but the ideality factor and proportionality coefficient remain virtually unchanged. STM images SD and their I-V characteristics show that, the contribution of peripheral current to total current of SD increases with increasing reverse voltage. The second section of the reverse I-V characteristics SD, which consists only of peripheral current is represented by a straight line in a semi-logarithmic scale. The potential barrier height, a dimensionless coefficient, the contact resistance, the area and the width of the periphery of the contact surface different from that for of the first initial portion I-V characteristics SD.
Keywords: Contact Metal –Semiconductor, Inhomogeneous Schottky Barrier, Peripheral Current Schottky Diode, Additional Electric Field, Semiconductor Converters, Limitation of Contact Surface.
Scope of the Article: Properties and Mechanics of Concrete