Physical Modeling of Graphene Nanoribbon FET- Quantum Mechanics
Nanda B.S1, Puttaswamy P.S2

1Nanda B.S*, Department of Electronics & Communication Engineering, P E S College of Engineering, India.
2Puttaswamy P.S, Department of Electrical & Electronics Engineering P E S College of Engineering, India.
Manuscript received on December 13, 2019. | Revised Manuscript received on December 20, 2019. | Manuscript published on January 10, 2020. | PP: 3230-3235 | Volume-9 Issue-3, January 2020. | Retrieval Number: C8672019320/2020©BEIESP | DOI: 10.35940/ijitee.C8672.019320
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Abstract: limited by scaling challenges of CMOS devices, the option to improve device performance is to look for novel materials and devices. Carbon, Carbon nanotubes (CNT) and graphene are prominent contenders for substituting silicon in near future. Graphene nanoribbon (GNR) which share many of the fascinating electrical and mechanical properties of CNT are a suitable device material because of compatibility with lithography process. A double gate GNRFET is simulated by solving quantum transport equation with self-consistent electrostatics, while incorporating non-parabolic band structure of GNRFET. Non equilibrium Green’s function (NEGF) approach is used for device simulation. This paper provides physical modeling of GNRFET and investigates the device characteristics and performance for different families of GNRs as well as for different GNR widths. 
Keywords: Scaling, CNT, Graphene, GNR, NEGF
Scope of the Article:  Mechanical Design