Design and Simulation of RF Capacitive MEMS Switch for Wide Band Applications with Different Dielectric Materials- A Step to Fast Switching Switches
C. Chandra Sekhar1, T. Kalpalatha Reddy2, Aditya ALGN3

1Dr. C. Chandrasekhar, Department of ECE, University, Tirupati (Andhra Pradesh), India.
2Dr. T. Kalpalatha Reddy, Department of ECE, University, Tirupati (Andhra Pradesh), India.
3ALGN Aditya, Department of ECE, University, Tirupati (Andhra Pradesh), India.
Manuscript received on 07 March 2019 | Revised Manuscript received on 20 March 2019 | Manuscript published on 30 March 2019 | PP: 822-826 | Volume-8 Issue-5, March 2019 | Retrieval Number: E3006038519/19©BEIESP
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Abstract: This Paper principally manages Analytical Design, Simulation parts of MEMS for satellite correspondence. The Switching is principally required in numerous applications. GaAs based PIN Diode and CMOS based FET are reasonable for exchanging in low recurrence applications, yet for good detachment and inclusion based exchanging in Ku-band, these switches are not appropriate. Ku-Band Micro Electro Mechanical Switches are giving answer for this issue. This Proposal includes Modeling and reenactment of MEMS Switches by utilizing distinctive Finite Element Analysis (FEM) devices for best small scale incitation structure and material analysis with different dielectric’s analysis and mechanical stability with different load analysis are simulated using Finite element modelling. The Switching speed of the device in 12-26 GHz was achieved higher switching speeds and less actuation voltage.
Keyword: RF MEMS, Switch, Dielectric Materials, Wide Band.
Scope of the Article: Computer Graphics, Simulation, and Modelling