Annealing Effect on Structural, Morphological and Electrical Properties by Screen Printed Bunsenite Ni O Thick Films
Ujwala m. Pagar1, U. P. Shinde2

1Ujwala M. Pagar*, Department of Physics, H.P.T. Arts and R.Y.K. Science College, Nashik, (M.S.) India.
2U.P. Shinde, Department of Physics, L.V.H. Arts, Science and Commerce College, Nashik, (M.S.) India.

Manuscript received on April 20, 2021. | Revised Manuscript received on April 26, 2021. | Manuscript published on April 30, 2021. | PP: 80-85 | Volume-10 Issue-6, April 2021 | Retrieval Number: 100.1/ijitee.F88260410621| DOI: 10.35940/ijitee.F8826.0410621
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Abstract: Thick films of NiO deposited on glass substrate by screen printing technique. The nano powder of AR grade NiO was used for the preparation of thick films. The X-ray diffraction (XRD), Scanning Electron Microscopy and Electrical Characterization was carried out for unannealed and annealed films. The annealed films were at 250 0 C-400 0 C in a muffle furnace. Using characterisation techniques, the success of the synthesised nanoparticles was confirmed. The x-ray diffraction was used for structural characterization which confirms the polycrystalline nature of the films with cubic structure. From the SEM analysis the films show uniformity, roughness, large crystals and agglomeration of particles. The SEM-EDS analysed morphology and chemical compositions. The correlations between structural and morphological properties are reported. The D.C. resistance of the films was measured by half bridge method in air atmosphere at 30OC to 350OC. From the electrical parameters the NiO films shows semiconducting nature. The TCR, activation energy and sheet resistivity, specific surface area were calculated at different annealing temperatures. The electrical conductivity at room temperature was calculated as 4.56 × 𝟏𝟎 −𝟒 (𝜴 ∙ 𝒎) −𝟏 . 
Keywords: NiO, Thick Films, XRD, SEM-EDS, TCR, Activation energy, Electrical conductivit