Design and Simulation of Thin Body Silicon Carbide MOSFET with Buried Oxide
Akalya Paranthaman1, Papanasam Esakki2

1Akalya Paranthaman, M.Tech. in VLSI Design, School of Computing, SASTRA Deemed to Be University, Thanjavur, (Tamil Nadu), India.
2Papanasam Esakki, Asssiatant Professor, School of Computing, SASTRA Deemed to Be University, Thanjavur, (Tamil Nadu), India.
Manuscript received on 01 May 2019 | Revised Manuscript received on 15 May 2019 | Manuscript published on 30 May 2019 | PP: 1874-1877 | Volume-8 Issue-7, May 2019 | Retrieval Number: G6131058719/19©BEIESP
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Abstract: Silicon carbide as a wide band gap semiconductor with attractive electrical and thermo physical properties has found its applications in high temperature, high power and radhard environment. However, silicon carbide MOS devices suffer from higher density of interface states than similarly oxidized silicon/SiO2 interface. Improving the interface and electrical characteristics of silicon carbide MIS/MOS structure suitable for the above said applications is the current focus of the researcher. In this work, thin body silicon carbide MOSFET with buried oxide has been designed using TCAD and its electrical characteristics has been analyzed. Comparison of drain, transfer and capacitance voltage characteristics with conventional silicon carbide MOSFET reveals that thin body with buried oxide has improved the performance of MOSFET with higher gate capacitance, higher drive current and gain than conventional structure. Proposed SiC MOSFET with buried oxide exhibit higher gain with stable threshold voltage as the thickness of the body increases. Further, the proposed device exhibit higher field effect mobility than conventional MOSFET.
Keyword: Buried oxide; MOSFET; Silicon carbide; TCAD.
Scope of the Article: Low-power design.