Performance Analysis of Inductive Source Degeneration Low Noise Amplifier using Multi-finger Technique
Kusuma M. S.1, S. Shanthala2, Cyril Prasanna Raj P.3
1Kusuma M S, Department of Research Scholar, Bangalore Institute of Technology, Bengaluru, (Karnataka),India.
2Dr. S Shanthala, Professor. & Head of a Department, Bangalore, Institute of Technology, Bengaluru, (Karnataka) India.
3Dr. Cyril Prasanna Raj P, Senior Member, IEEE, M. S Engineering College, Bengaluru, (Karnataka) India.
Manuscript received on 30 June 2019 | Revised Manuscript received on 05 July 2019 | Manuscript published on 30 July 2019 | PP: 1636-1642 | Volume-8 Issue-9, July 2019 | Retrieval Number: I8473078919/19©BEIESP | DOI: 10.35940/ijitee.I8473.078919
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split into multiple fingers using multi-finger technology. The schematic is captured using ADS. The performance of LNA for various technologies has been analyzed using PTM 180 nm, PTM 130 nm and PTM 90 nm models. The amplifier with single transistor achieves minimum noise figure of 0.178 dB noise figure and maximum gain of 20.045 dB using 130 nm model technology for Bluetooth applications. Similarly 0.288 dB of minimum noise figure and peak gain of 17.971 dB are obtained using multi-finger MOSFET of PTM 90 nm technologyrespectively.The reverse isolation (S12) below -50 dB is achieved.
Keywords: Advanced Design System (ADS), Bluetooth, CMOS, Low Noise Amplifier, Multi-finger, RF frequency.
Scope of the Article: Predictive Analysis