Fabrication and Characterization of amorphous Lanthanum Zirconate Gate Capacitors
Mohammad Hayath Rajvee1, P. Rajesh Kumar2, Y. Srinivasarao3

1Mohammad Hayath Rajvee, Center for Nanotechnology, AU College of Engineering (A), Andhra University, Visakhapatnam -5320003, Andhra Pradesh, India.
2P. Rajesh Kumar, Professor, Department of Electronics and Communication Engineering, AU College of Engineering (A), Andhra University, Visakhapatnam -5320003, Andhra Pradesh, India.
3Y. Srinivasarao, Professor, Department of Instrument Technology, AU College of Engineering(A), Andhra University, Visakhapatnam -5320003, Andhra Pradesh, India. 

Manuscript received on 26 August 2019. | Revised Manuscript received on 06 September 2019. | Manuscript published on 30 September 2019. | PP: 2868-2872 | Volume-8 Issue-11, September 2019. | Retrieval Number: K24150981119/2019©BEIESP | DOI: 10.35940/ijitee.K2415.0981119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: A novel high-k gate dielectric material, i.e., Lanthanum-doped Zirconium oxide (La-doped ZrO2 ), has been thoroughly studied for applications in future metal oxide semiconductor field-effect transistor (MOSFET). The film’s structural, chemical and electrical properties are investigated experimentally. The incorporation of La into ZrO2 impacted the electrical properties in terms of leakage current while not sacrificing its dielectric constant. The dielectric constant of 25 is achieved which is calculated from the C-V analysis taken from Agilent 1500A Semiconductor Device Analyzer. XRD, FTIR, EDX analysis were conducted to confirm the stoichiometry and bond formation of La2Zr2O7 . The sol-gel spin coating method is adopted to form a uniform thin film over p-Silicon substrate and Aluminium is evaporated in the eBeam technique as gate electrode to form an MIS capacitor. The La-doped ZrO2 film is hence a potential high-k gate dielectric for future application in MIS thin film transistors.
Keywords: La2Zr2O7 , MOS capacitor, High-k, Gate capacitor, dielectric constant, thin film.
Scope of the Article: Network Traffic Characterization and Measurements