Design A High Speed Spin-Torque Transfer Magnetic Tunnel Junction (Stt-Mtj) Non-Volatile Flip-Flops Based On Memory
K. Bala Krishna1, P. Santhosh2, T. Indira3

1K. Bala Krishna, Assistant Professor, Dept of ECE, Eluru Engineering College, Eluru, A.P., India. 
2P. Santhosh, Assistant Professor, Dept of ECE, Hyderabad Institute of technology and management, Telangana, India.
3T. Indira, Assistant Professor, Dept of ECE, Narasaropeta engineering college, Narasaraopeta, A.P., India.

Manuscript received on 23 August 2019. | Revised Manuscript received on 09 September 2019. | Manuscript published on 30 September 2019. | PP: 3690-3694 | Volume-8 Issue-11, September 2019. | Retrieval Number: K25450981119/2019©BEIESP | DOI: 10.35940/ijitee.K2545.0981119
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Abstract: Basically, in low power applications, the energy should be harvested depend on the frequent interruptions. In this paper we proposed the design of spin-transfer torque magnetic tunnel junctions (STT-MTJs) non volatile based on flip flops based memory. The main intent of non volatile is to address the state of system by saving the memory. By using STT-MTJs based flip flop, high energy consumption will be obtained and there will be backup of the system. In CMOS the flip flop will used standard magnetic MRAM technology. The main intent of magnetic tunnel junctions is to store the data. The proposed non volatile flip flop will determine the delay and energy. Logic circuits are enabled using non volatility and this will reduce the start up latency. This start up latency ranges from micro seconds to hundred pico seconds. Here the information is stored using non volatile logic of memory. This process is done on pre chip basis. Hence compared to existed system, the proposed system gives effective results.
Keywords: Non-Volatile Flip flop, System-On-Chip (SoC), Non-Volatile Scan Flip flop.
Scope of the Article: Optical and High-Speed Access Networks