Self-Heating Effects in SiGe Heterojunction Bipolar Transistor with Different Ge Grading Profile
M. R. Jena1, A. K. Panda2, G. N. Dash3
1M. R. Jena1*, Department of Electronics and Communication Engineering, Sambalpur University Institute of Information Technology, Jyoti Vihar, Burla, Sambalpur, Odisha, India.
2A. K. Panda, Department of Electronics and Telecommunication Engineering, National Institute of Science and Technology, Berhampur 761008, Odisha, India.
3G. N. Dash, Electron Devices Group, School of Physics, Sambalpur University, Jyoti Vihar, Burla, Sambalpur768019, Odisha, India.
Manuscript received on September 16, 2019. | Revised Manuscript received on 24 September, 2019. | Manuscript published on October 10, 2019. | PP: 3993-3999 | Volume-8 Issue-12, October 2019. | Retrieval Number: L34861081219/2019©BEIESP | DOI: 10.35940/ijitee.L3486.1081219
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Abstract: A comparative account of self heating effect of four SiGe HBTs with different Ge grading profiles, designated as Hybrid Trapezoidal (HT), Symmetrically Triangular (ST), Linear Increasing (LI), and Conventional Trapezoidal (CT) with maximum Ge contents of 20%, is presented. Based on an experimentally validated model of the Silvaco TCAD tool, the properties of the four HBTs are simulated. It is observed that both self heating and local temperature increase due to higher device power dissipation. The effect of energy balance and non iso thermal energy balance effect is observed in SiGe HBT with different Ge base profile have been studied in terms of DC, AC, and RF performances and compared.
Keywords: SiGe HBT, TCAD Tool, Self Heating Effect, Ge Grading Profile
Scope of the Article: Communication Technologies