Modeling of on-off Current and Cutoff Frequency in Organic Thin Film Transistors
Swati Singh1, Mahendra Kumar2

1Swati Singh* , Assistant Professor, Department of EC Department, Bharat Institute of Technology, Meerut, India.
2Dr. Mahendra Kumar, Associate Professor, Department of EC, Bharat Institute of Technology, Meerut, India.
Manuscript received on December 11, 2019. | Revised Manuscript received on December 22, 2019. | Manuscript published on January 10, 2020. | PP: 3028-3035 | Volume-9 Issue-3, January 2020. | Retrieval Number: C8063019320/2020©BEIESP | DOI: 10.35940/ijitee.C8063.019320
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Abstract: Organic thin-film transistors (OTFTs) are providing incitement in various integrated circuit applications because of advantages like low cost and being flexible. In this paper we present an analytical modeling of on-off current and cutoff frequency in organic thin film transistors. The proposed model accurately describes both the parameters uniquely and is based on the standard equations of transistor. The model parameters are listed out and simulation of the final model is performed in MATLAB. Furthermore, it has been concluded that the high cutoff frequency of OTFTs can be achieved with short channel length and high gate voltage; further high on-off current ratio can be attained by lowering semiconducting layers’ thickness and increasing the mobility.
Scope of the Article:  Frequency Selective Surface