28 GHz Off-the-Shelf Low Noise Amplifier for 5G Baseband Wireless System
Nur Syahadah Yusof1, Mohamed Fauzi Packeer Mohamed2, Mohamad Faiz Mohamed Omar3, Mohd Fadzil Ain4, Norlaili Mohd Nor5, Mohamad Adzhar Md Zawawi6, Mohammad Khairi Ishak7, Mohd Hendra Hairi8
1Nur Syahadah Yusof, School of Electrical and Electronic Engineering, USM.
2Mohamed Fauzi Packeer Mohamed*, School of Electrical and Electronic Engineering, USM.
3Mohamad Faiz Mohamed Omar, Collaborative Microelectronic Design Excellence Centre (CEDEC), USM, Pulau Pinang, Malaysia.
4Mohd Fadzil Ain, Collaborative Microelectronic Design Excellence Centre (CEDEC), USM, Pulau Pinang, Malaysia, School of Electrical and Electronic Engineering, USM.
5Norlaili Mohd Nor, School of Electrical and Electronic Engineering, USM
6Mohamad Adzhar Md Zawawi, School of Electrical and Electronic Engineering, USM
7Mohammad Khairi Ishak, School of Electrical and Electronic Engineering, USM.
8Mohd Hendra Hairi, Faculty of Electrical Engineering (FKE), Universiti Teknikal Malaysia Melaka (UTEM).
Manuscript received on December 14, 2019. | Revised Manuscript received on December 20, 2019. | Manuscript published on January 10, 2020. | PP: 3051-3058 | Volume-9 Issue-3, January 2020. | Retrieval Number: C8365019320/2020©BEIESP | DOI: 10.35940/ijitee.C8365.019320
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper presents the simulation and measured results of a Low Noise Amplifier (LNA) working at 28 GHz for the 5G wireless system. LNA is used to amplify the weak receiving signals in the RF receiver system. The 28 GHz (Ka-band) LNA is designed to work for 5G technology wireless system. Here a Fujitsu FHR02X transistor is used in the simulation process, where the one-stage LNA is adopting a common-source with source inductive degenerative topology.In the fabrication process, GaAs pHEMT MMIC HMC519LC4 LNA is mounted on the Rogers 4003C board (εr = 3.38 and δ = 0.0027)and tested using (PNA-X N5246A) Microwave Network Analyzer. The final LNA design in the simulation process achieves a power gain of 9.185 dB, input and output return losses of – 13.124 dB and – 15.455 dB respectively, and noise figure of 9.185 dB. Furthermore, the fabricated LNA achieves a power gain of 10.91 dB, input and output return losses of – 7.75 dB and – 22.13 dB respectively. Although the return loss (S11) value is higher than -10 dB, but the LNA still able to obtain gain more than 10 dB. Thesimulation and fabricated LNA have input return loss quite closed to the given value in the datasheet. Thus, the LNA transmission line has a good output matching design.
Keywords: Low Noise Amplifier, 5G, Wireless Systems, mm-Wave, MMIC, pH EMT, Semiconductor device.
Scope of the Article: 5G Communication