The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET
Anjali Goel1, Neelam Rup Prakash2
1Anjali Goel*, Student, Dept. of Electronics and Communication, Punjab Engineering College, (Deemed to be University)Chandigarh.
2Neelam Rup Prakash, Professor, Dept. of Electronics and Communication, Punjab Engineering College,(Deemed to be University)Chandigarh.
Manuscript received on March 15, 2020. | Revised Manuscript received on March 26, 2020. | Manuscript published on April 10, 2020. | PP: 972-979 | Volume-9 Issue-6, April 2020. | Retrieval Number: F4051049620/2020©BEIESP | DOI: 10.35940/ijitee.F4051.049620
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.
Keywords: Doping, FinFET , Gate Voltage, MOSFET, TFET and Threshold Voltage.
Scope of the Article: Sequential, Parallel And Distributed Algorithms And Data Structures.