Performance Analysis of OLED by Variation of Doping in Hole Transport Layer
Abhilasha1, K. M. Singh2

1Abhilasha, Department of Electronics and Communication Engineering, JECRC University, Jaipur (Rajasthan), India.
2K. M. Singh, Professor, Department of Electronics and Communication Engineering, JECRC University, Jaipur (Rajasthan), India.
Manuscript received on 01 May 2019 | Revised Manuscript received on 15 May 2019 | Manuscript published on 30 May 2019 | PP: 342-346 | Volume-8 Issue-7, May 2019 | Retrieval Number: G5237058719/19©BEIESP
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Abstract: Organic Light Emitting Diode i a firm condition lights tools. Where as, the charge carriers are given from the anode and cathode. In this paper, we proposed our cutting-edge method with different doping concentration of the substance in Organic Light Emitting Diode (OLED). Additionally, we increase the performance of OLED devices and deliberate their execution augmentation using exploiting dissimilar doping. The performance of OLED depends upon various factors like thickness of material, doping, band gap and many more. In this paper, one parameter i.e. doping concentration that affect the performance is studied and analyzed. For simulation purpose, 2D numerical simulations using finite element method by device simulation software silvaco ALTLAS by silvaco Inc. is used. And simulation result shows that on increasing doping in hole transport layer, it increases luminance power. At a doping concentration p-type impurity of 1018, maximum luminance power 9.99×10-5 W/μm is obtained and maximum current is 4.99μA.
Keyword: Doping, Emissive layer, Hole transport layer, Organic materials.
Scope of the Article: Transportation Engineering.