Electrical Characteristics Assessment on Heterojunction Tunnel FET (HTFET) by Optimizing Various High-κ Materials: HfO2/ZrO2
Ritam Dutta1, Nitai Paitya2
1Ritam Dutta, Dept. of Electronics & Communication Engineering, Surendra Institute of Engineering and Management, Maulana Abul Kalam Azad University of Technology, West Bengal, India.
2Nitai Paitya, Dept. of Electronics & Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Gangtok, Sikkim, India.
Manuscript received on 04 July 2019 | Revised Manuscript received on 07 July 2019 | Manuscript published on 30 August 2019 | PP: 393-396 | Volume-8 Issue-10, August 2019 | Retrieval Number: I8418078919/2019©BEIESP | DOI: 10.35940/ijitee.I8418.0881019
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper, DC performance of double gate tunnel field effect transistor with heterojunction has been assessed by various III-V compound semiconductor materials using 2-D Technology Computer Aided Design (TCAD) simulations. Different hetero high-κ dielectric materials like HfO2 , ZrO2 have been incorporated to achieve better electrical characteristics, viz. high ON-state current drivability, improved switching ratio and high tunneling probability. In this work, lower band gap materials have been used as hetero gate dielectric to enhance mobility using band to band tunneling (BTBT), transconductance and steeper subthreshold-slope. The heterojunction TFET (HTFET) then incorporated with various hetero dielectrics (high-κ and low-κ combination), where the ZrO2 – SiO2 combination of dielectric having thickness of 2 nm both in front and back gate, attains maximum value of ION as 1.522 × 10-5 A/µm. The subthreshold swing (ss) has also been recorded best as 23.93 mV/dec in comparison with conventional homo dielectric i.e. SiO2 -SiO2 oxide throughout the 50 nm channel of HTFET as 34.22 mV/dec, can serve as better alternative tunnel FETs in low power logic applications.
Keywords: DC Performance, Heterojunction Tunnel FET (HTFET), High – κ dielectric, Subthreshold swing, 2-D TCAD, Band-to-band tunneling (BTBT).
Scope of the Article: Materials Engineering