Effect of Latitudinal and Longitudinal Grain Boundaries on the characteristics of Polycrystalline Silicon MOSFET Devices
Kiran Sharma1, Tarun Kumar Dhiman2, Pankaj Negi3, D. P. Joshi4

1Kiran Sharma, Department of Physics, Graphic Era deemed to be University, Dehradun, Uttarakhand, India. 

2Tarun Kumar Dhiman, Department of Mechanical Engineering, Graphic Era Hill University, Dehradun, Uttarakhand, India. 

3Pankaj Negi, Department of Mechanical Engineering, Graphic Era Hill University, Dehradun, Uttarakhand, India.  

4D. P. Joshi, Uttarakhand Public Service Commission, Haridwar, Uttarakhand, India.  

Manuscript received on 13 October 2019 | Revised Manuscript received on 20 October 2019 | Manuscript Published on 29 June 2020 | PP: 33-37 | Volume-8 Issue-10S2 August 2019 | Retrieval Number: J100908810S219/2019©BEIESP | DOI: 10.35940/ijitee.J1009.08810S219

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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The MOSFETs, Complementary MOS-ICs are the core switch devices of current which also critically affects the ICs. For higher IC performance the present era has shifted to the device scaling to sub-50nm range TFT (thin film transistor) based MOSFET which involves complex fabrication process. The presence of grain boundaries greatly affects the characteristics of these devices. Present paper describes dependence of output characteristics inpolycrystalline silicon MOSFET devices on the longitudinal and latitudinal grain boundaries (GBs) have been investigated theoretically. It is observed that in both latitudinal and longitudinal GBs, the GB scattering potential ‘qφ’ and the GB distribution parameter ‘s’ are equally involved. At all values of gate voltages the contribution in drain current of the device is more due to latitudinal GBs in comparison to longitudinal GBs. However, at high gate voltages longitudinal GBs play a significant role in the drain current of the device.The theoretical computations of the model are synonymous to the experimental work.

Keywords: longitudinal, GBs, MOSFET, MOS-ICs.
Scope of the Article: