Modelling of High Frequency SIC MESFET for Optical Sensing Applications
Boggadi Nagarjuna Reddy

Boggadi Nagarjuna Reddy, taken under graduate 2010 on electronics and communication engineering in JNTUniversity, Anatapur. The master degree completed 2013 on VLSI in Sathyabama university, Chennai.
Manuscript received on 29 August 2019. | Revised Manuscript received on 04 September 2019. | Manuscript published on 30 September 2019. | PP: 1404-1408 | Volume-8 Issue-11, September 2019. | Retrieval Number: J97580881019/2019©BEIESP | DOI: 10.35940/ijitee.J9758.0981119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The analysis and design of fabricated optical GaAs high frequency MESFET model was improved and also majority carrier concentration doping is improved in un flatted channel region. This result was proved with component of photo sensors. The diode voltage is produced at the metal semi conductor rectifying contact and its blocks current flow in one polarity of voltage. The Laplace’s equation is used to solve problematically under the absence of light in a place and interpretation state. This paper main intention is to develop the MESFET using the finite differences method and solve the under illumination. The simulation responses main improvement is bunch of charge particles in optical device, the channel charge particles are varied at various operating voltages and light and also the simulation result was plotted in X and Y direction respect of electric field. In here the simulated and plotted results was analyzed the optical component is purely affected with intensity of illumination.
Keywords: Silicon Carbide, MESFET, Frequency, etc.
Scope of the Article: