Noise Power Spectral Density Analysis for Silicon Carbide Substrate MESFET
Boggadi Nagarjuna Reddy

Boggadi Nagarjuna Reddy, taken under graduate 2010 on electronics and communication engineering in JNTUniversity, Anatapur. The master degree completed 2013 on VLSI in Sathyabama university, Chennai, India.
Manuscript received on 23 August 2019. | Revised Manuscript received on 06 September 2019. | Manuscript published on 30 September 2019. | PP: 1409-1412 | Volume-8 Issue-11, September 2019. | Retrieval Number: J97590881019/2019©BEIESP | DOI: 10.35940/ijitee.J9759.0981119
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Abstract: This paper mainly concentrates on the transistors working functions, electrical characteristics and noise analysis at various operating voltages and temperatures. For this improvement authors are developed simulation methods for better results. The high frequency transistors are exposed with bunch of silicon carbide crystalline substances like 3C, 4H and 6H-SiC MESFETs. Because of the good researchers work, now a day’s all are compared the parameter in between of cubic and hexagonal crystalline structure of silicon carbide MESFETs. Silicon carbide material is having wide band gap because of this reason it’s useful for high energy and high frequency applications. The silicon carbide transistors are having large operating voltage in channel region because of this reason in channel region flows large current and also very less noise is produced. In wide band gap semiconductor transistors are produced very less noise compared to the various categories of substrates.
Keywords: MESFET, Silicon Carbide, Noise,etc.
Scope of the Article: