Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator
Vidhya Sagar G1, Vijaya Kumar D2
1Vidhya Sagar, School of Electrical Engineering, VIT, Vellore (Tamil Nadu), India.
2Vijaya Kumar D, School of Electrical Engineering, VIT, Vellore (Tamil Nadu), India.
Manuscript received on 06 December 2019 | Revised Manuscript received on 20 December 2019 | Manuscript Published on 31 December 2019 | PP: 61-66 | Volume-8 Issue-12S2 October 2019 | Retrieval Number: L101210812S219/2019©BEIESP | DOI: 10.35940/ijitee.L1012.10812S219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.
Keywords: SiGe, HJLFinFET, Subthreshold Slope (SS) and Drain Induced Barrier Lowering (DIBL), Short Channel Effects (SCE).
Scope of the Article: Nanoelectronics and Quantum Computing