Impact of Negative Capacitance Junctionless Nanowire (NCJLNW) MOSFET on Ring Oscillator Design and Analysis
Manish Kumar Rai1, Sanjeev Rai2
1Manish Kumar Rai, Department of Electronics & Telecommunication Engineering, G. H. Raisoni College of Engineering & Management, Pune (M.H), India.
2Sanjeev Rai, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj (U.P), India.
Manuscript received on 10 February 2023 | Revised Manuscript received on 18 February 2023 | Manuscript Accepted on 15 March 2023 | Manuscript published on 30 March 2023 | PP: 1-7 | Volume-12 Issue-4, March 2023 | Retrieval Number: 100.1/ijitee.D94640312423 | DOI: 10.35940/ijitee.D9464.0312423
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This work presents the analysis of NCJLNW for lowpower analogue/RF applications. This device exhibits reduced power consumption, fewer SCEs, lower leakage, and a higher Ion/Ioff ratio. The results indicate that the proposed device improves the intrinsic gain, cut-off frequency, and transconductance and reduces DIBL. The analysis of band energy, surface potential, and electric field has also shown promising results. A ring oscillator has been designed using this device; the study of the oscillator reveals a lower operating voltage, resulting in reduced power consumption and high noise immunity. The frequency of oscillation is found to be higher at 172.1 GHz at a channel length of 20 nm.
Keywords: Drain Induced Barrier Lowering (DIBL), Ferroelectric, Negative capacitance Junction less Nanowire (NCJLNW), Short Channel Effect (SCE).
Scope of the Article: Design and Diagnosis