Tunnel Diode Loaded Rectangular Microstrip Antenna with Passive Components for Millimeter Range
Priti Sharma1, Tazeem Ahmad Khan2, B. R. Vishwakarma3

1Priti Sharma, M.Tech Scholar, Department of ECE, AFU, Faridabad (Haryana), India.
2Tazeem Ahmad Khan, Assistant Professor, Department of ECE, AFU, Faridabad (Haryana), India.
3B.R. Vishwakarma, Professor, Department of ECE, IT, BHU, (Uttar Pradesh), India.
Manuscript received on 14 August 2014 | Revised Manuscript received on 22 August 2014 | Manuscript Published on 30 August 2014 | PP: 51-53 | Volume-4 Issue-3, August 2014 | Retrieval Number: C1771084314/14©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The present work describes the circuit model based analysis of tunnel diode(Active Device) loaded microstrip antenna with parasitic elements using equivalent circuit concept. To optimize the antenna characteristics a study has been carried out as a function of tunnel diode space with microstrip patch. It is observed that the antenna can be operated over a range of frequency form 39.163GHz to 57.688GHz for Germenium tunnel diode loaded patch just by varying the value of passive elements. The return loss improves to -43.3dB.
Keywords: Microstrip Antenna; Active Tunnel Diode Loaded Patch and Passive Elements Patch.

Scope of the Article: Microwave Antenna